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The CGH60120D-GP4 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die manufactured by MACOM Technology Solutions. It operates at frequencies up to 6.0 GHz and delivers a typical saturated output power (PSAT) of 120 W. The device is designed for operation at 28 V and features high breakdown voltage characteristics suitable for demanding RF environments.
Verify the specific suffix designation against official MACOM documentation to confirm exact electrical tolerances and binning classifications. Ensure compatibility with required substrate materials and mounting techniques for this bare die configuration. Confirm RoHS compliance status through current manufacturer declarations prior to integration into final assemblies.
Select this component when high power density and wide bandwidth are critical requirements exceeding silicon or GaAs capabilities. Evaluate thermal management solutions carefully due to the high power dissipation inherent in 120 W operation. Consider the 28 V supply requirement and ensure bias circuits support the necessary linearization needs for complex modulation schemes.
This part belongs to MACOM's portfolio of high-performance GaN HEMT devices designed for RF power applications. It represents an advancement over traditional semiconductor technologies by offering higher saturation electron drift velocity and better thermal handling. The die format allows for custom packaging solutions tailored to specific system-level thermal and electrical constraints.
Publicly confirmed substitute part numbers are not available in the provided reference material. Consult MACOM technical support for direct replacements or updated series equivalents that meet identical frequency and power specifications.