CGHV14500F

Overview

The CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for L-band radar amplifier applications. It operates from DC to 1800 MHz with a typical output power of 500 W and a power gain of 16 dB. The device features an internally pre-matched input and an unmatched output, housed in a ceramic/metal flange package (Type 440117). Key electrical characteristics include a drain-source voltage rating of 150 V, a gate threshold voltage of -3.0 V, and a saturated drain current of 77.7 A.

Feature Summary

• High efficiency and wide bandwidth capabilities optimized for L-band radar systems
• Internally pre-matched on the input port for simplified circuit design
• Robust construction with unmatched output port for flexible matching networks
• Low pulsed amplitude droop ensuring stable signal performance

Applications

• L-Band radar amplifier applications
• Band-specific applications ranging from 800 through 1600 MHz
• High-power transmitter operations

Procurement Notes

Verify the specific package type required for the application, as the F suffix denotes a ceramic/metal flange package distinct from the P pill package variant. Confirm that the ordering suffix strictly identifies the physical form factor without altering the underlying semiconductor function or electrical specifications. Ensure compatibility with the designated mounting hardware and thermal interface materials specified in the mechanical drawings.

Selection Notes

Select this component when designing amplifiers requiring high output power within the L-band spectrum. The internal input matching reduces external component count, while the unmatched output allows for custom impedance transformation. Consider the thermal management requirements based on the pulsed thermal resistance and maximum case operating temperature limits provided in the datasheet.

Part Context

This device belongs to MACOM's CGHV series of GaN HEMTs, which are engineered for high-voltage and high-power RF applications. The CGHV14500F specifically targets the L-band frequency range, offering a balance of high gain and efficiency suitable for demanding radar environments. It is part of a family that includes both flanged and pill package options to accommodate various thermal and mechanical integration needs.

Replacement Considerations

CGHV14500P

FAQ

What is the difference between the CGHV14500F and CGHV14500P?

The primary difference is the package type. The CGHV14500F uses a ceramic/metal flange package (Type 440117), while the CGHV14500P uses a pill package (Type 440133). The electrical characteristics remain consistent across both variants.

Is the output port matched internally?

No, the CGHV14500F has an internally pre-matched input but features an unmatched output port, allowing designers to implement custom output matching networks.

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) rating is 150 V at 25°C.