CGHV14500P

Overview

The CGHV14500P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for L-Band radar amplifier applications. It operates from DC to 1800 MHz with a drain-source voltage of 50 V and typical output power of 500 W. The device features an internally pre-matched input and unmatched output, housed in a pill package (440133). Key electrical characteristics include a gate threshold voltage range of -3.8 V to -2.3 V, a saturated drain current of 77.7 A, and a breakdown voltage of 125 V.

Feature Summary

• High efficiency and wide bandwidth capabilities optimized for L-Band radar systems
• Internally pre-matched input impedance for simplified circuit design
• Robust performance under mismatched load conditions up to 5:1 VSWR
• Low pulsed amplitude droop ensuring signal integrity during operation

Applications

• L-Band radar amplifier systems
• Band-specific applications ranging from 800 through 1600 MHz
• UHF through 1800 MHz FET tuning range implementations

Procurement Notes

Verify the specific package type required for your application, as the datasheet covers both flanged and pill variants. Confirm that the ordering suffix 'P' corresponds to the pill package (440133) rather than the flanged version. Ensure compatibility with the intended thermal management solution, considering the maximum case operating temperature limits specified in the absolute maximum ratings section.

Selection Notes

Select this component when designing amplifiers requiring high output power within the L-Band spectrum. Consider the internal pre-matching feature if minimizing external matching network complexity is a priority. Evaluate the thermal dissipation requirements against the provided de-rating curves to ensure reliable operation within the specified junction temperature limits.

Part Context

This part belongs to the CGHV14500 family of GaN HEMTs manufactured by MACOM Technology Solutions. It shares core RF performance specifications with the CGHV14500F variant but differs in physical packaging. The pill package option provides an alternative form factor for integration into specific chassis or module designs compared to the ceramic/metal flange configuration.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers before implementation.