CGHV1F025S

$92.68

Description：RF MOSFET HEMT 40V 12DFN
Series：GaN

SKU:79ab193e9428 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 40V 12DFN
Series：GaN
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：HEMT
Frequency：0Hz ~ 15GHz
Gain：11.6dBm
Voltage - Test：40 V
Current Rating (Amps)：2A
Noise Figure：-
Current - Test：150 mA
Power - Output：29W
Voltage - Rated：100 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：12-VFDFN Exposed Pad
Supplier Device Package：12-PDFN (3x4)
Configuration：-

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CGHV1F025S

Overview

The CGHV1F025S is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency, gain, and wide bandwidth. It operates on a 40V rail within a 3mm x 4mm surface-mount dual-flat-no-lead (DFN) package. The device supports frequencies up to 15 GHz with a typical output power of 25 W. At 9.4 GHz, it delivers 11 dB gain and 48% drain efficiency under pulsed conditions.

Feature Summary

High-efficiency GaN HEMT technology optimized for wide bandwidth applications
Capable of operation at frequencies extending up to 15 GHz
Designed for deployment in L-, S-, C-, X-, and Ku-Band amplifier configurations

Applications

L-band amplifier applications
S-band amplifier applications
C-band amplifier applications
X-band amplifier applications
Ku-band amplifier applications

Procurement Notes

Verify the specific datasheet revision prior to procurement, as MACOM reserves the right to modify product specifications without notice. Confirm that the required application circuit components align with the latest Bill of Materials provided in the official documentation. Ensure handling procedures meet the specified Electrostatic Discharge classifications to prevent damage during assembly.

Selection Notes

Select this component when designing amplifiers requiring high output power across multiple microwave bands. The device accommodates reduced drain voltages down to 20V while maintaining performance. Evaluate thermal resistance requirements carefully, noting that junction-to-case values vary between pulsed and continuous wave operations based on the PCB layout.

Part Context

This part belongs to the CGHV series of Gallium Nitride High Voltage transistors manufactured by MACOM Technology Solutions. These devices utilize a silicon carbide substrate to achieve superior high-frequency characteristics and breakdown voltage capabilities compared to standard silicon technologies.

Replacement Considerations

Consult the official MACOM Product Change Notification documents for verified substitute part numbers or updated revisions. Do not assume functional equivalence with other models in the CGHV family without verifying pinout compatibility and electrical ratings against the current datasheet.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.