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Product Detailed Parameters
- Description：RF MOSFET HEMT 40V DIE
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：HEMT
- Frequency：18GHz
- Gain：17dB
- Voltage - Test：40 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：30 mA
- Power - Output：6W
- Voltage - Rated：100 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：Die
- Supplier Device Package：Die
- Configuration：-
Download product information
Overview
The CGHV1J006D is a high-voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die on a silicon carbide substrate, utilizing a 0.25 μm gate length process. It operates from 10 MHz to 18 GHz at 40 V with a drain-source breakdown voltage of 100 V. At 10 GHz, it provides a typical small signal gain of 17 dB and a power added efficiency of 60%. The device delivers a typical saturated output power of 6 W and maintains stability under an output mismatch stress of up to 10:1 VSWR.
Feature Summary
- High-frequency operation capability extending up to 18 GHz
- Superior high-efficiency performance characteristics
- Robust reliability under significant output mismatch conditions
Applications
- Satellite Communications
- Point-to-Point Communications Links
- Marine Radar Systems
- Pleasure Craft Radar
- Port Vessel Traffic Services
- Broadband Amplifiers
- High Efficiency Amplifiers
Procurement Notes
Verify the specific revision level against the latest MACOM datasheet before finalizing designs. Confirm that the bare die form factor aligns with your assembly capabilities, as it requires specialized eutectic die attach using 80/20 AuSn solder. Ensure thermal management solutions accommodate the junction-to-case thermal resistance specifications for reliable long-term operation.
Selection Notes
Select this component when designing circuits requiring wide bandwidth coverage up to 18 GHz combined with high power density. The 40 V operating voltage and 100 V breakdown rating make it suitable for applications demanding robust voltage margins. Consider its bare die configuration if custom packaging or direct mounting to carriers like CuMoCu is preferred over standard surface-mount packages.
Part Context
This device belongs to MACOM's CGHV series of GaN-on-SiC transistors designed for high-voltage RF and microwave applications. It utilizes a 0.25 μm gate length fabrication process to achieve superior high-frequency performance. The product line targets demanding environments where high efficiency and broad bandwidth are critical requirements.
Replacement Considerations
No public confirmed substitute part numbers are documented in the official datasheet.
FAQ
What is the maximum output mismatch stress the device can withstand?
The device can withstand an output mismatch stress of up to 10:1 VSWR at all phase angles without damage.
How is the saturated output power defined for this component?
Saturated output power is defined by a gate current of 0.12 mA.
What type of solder is recommended for attaching this bare die?
Eutectic die attach using 80/20 AuSn solder is recommended.
