CGHV27030S

Overview

The CGHV27030S is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF applications. It operates from DC to 6.0 GHz and supports both 50 V and 28 V supply rails. The device delivers 30 W typical output power at 2.5-2.7 GHz with 50 V operation, achieving up to 73% drain efficiency under pulsed conditions. Key electrical parameters include a 150 V drain-source breakdown voltage, -3.8 V gate threshold voltage, and a maximum operating junction temperature of 225°C. It is housed in a compact 3 mm x 4 mm dual-flat-no-lead (DFN) surface-mount package.

Feature Summary

• High efficiency and wide bandwidth capabilities suitable for demanding RF environments
• Dual-voltage operational flexibility supporting both 50 V and 28 V power rails
• Robust thermal performance with a maximum junction temperature rating of 225°C
• Integrated large signal models available for ADS and MWO simulation platforms

Applications

• Telecommunications infrastructure operating between 700 MHz and 3700 MHz
• Tactical communications systems including land mobile radios
• L-Band radar amplifier modules
• S-Band radar amplifier modules

Procurement Notes

Verify the specific application circuit requirements against the official datasheet before ordering. Confirm that the design accommodates the required case temperature and thermal resistance values for reliable operation. Ensure compatibility with the specified moisture sensitivity level and electrostatic discharge classifications during handling and assembly processes.

Selection Notes

Select this component when designing amplifiers requiring high power density across a wide frequency range. Consider the availability of dedicated demonstration circuits like AMP1 through AMP5 for rapid prototyping at specific frequency bands. Evaluate the trade-off between gain and efficiency based on the chosen supply voltage and biasing configuration.

Part Context

This part belongs to MACOM's CGHV series of GaN-on-SiC transistors. It is specifically engineered to provide industry-leading gain and efficiency compared to silicon or LDMOS alternatives. The device utilizes a dual-flat-no-lead package to facilitate efficient heat dissipation and compact board integration for modern RF front-end designs.

Replacement Considerations

Direct replacements are not explicitly listed in the public documentation. Designers should evaluate other devices within the CGHV family or consult manufacturer engineering support for cross-reference recommendations based on specific frequency and power requirements.