CGHV31500F

Overview

The CGHV31500F is a packaged GaN amplifier operating from 2.7 to 3.1 GHz, delivering 500 W saturated power with 12 dB large signal gain and 65% drain efficiency. It features internal 50 Ω matching at both input and output ports. The device utilizes a 0.4 um GaN on SiC process and operates within a temperature range of -40°C to +125°C.

Feature Summary

• Internally matched to 50 ohms at both input and output ports
• High temperature operation capability up to +125°C
• Utilizes high-performance 0.4 um GaN on SiC production process

Applications

• General amplification
• S-band radar systems

Procurement Notes

Verify the specific revision status and datasheet version before procurement. Confirm compliance with current RoHS EU directive requirements. Ensure proper ESD handling procedures are followed during storage and installation due to static sensitivity. Check for any export restrictions or required documentation prior to ordering.

Selection Notes

Select this component for S-band applications requiring high power density and thermal resilience. The integrated 50-ohm matching simplifies circuit design by eliminating external matching networks. Evaluate thermal management solutions to maintain junction temperatures below +225°C for optimal reliability and extended MTTF.

Part Context

This part belongs to MACOM's portfolio of GaN on SiC RF power transistors designed for defense and commercial markets. It is housed in a thermally enhanced flange package (440226) optimized for superior SWaP-C performance in next-generation systems compared to discrete transistor implementations.

Replacement Considerations

CGHV31500F-AMP: Sample board containing the CGHV31500F for evaluation purposes.