CGHV35060MP

Overview

The CGHV35060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S-Band performance. It operates within the 2700-3800 MHz frequency range and utilizes a 50 V drain supply. The device features an internally pre-matched input with an unmatched output, housed in a small 6.5mm x 4.4mm plastic surface mount package. Typical performance at 3.1 GHz includes 14.5 dB gain, 88 W output power, and 61% drain efficiency.

Feature Summary

• Internally pre-matched on input for simplified circuit design
• Optimized for S-Band radar and LTE base station applications
• High power density in a compact plastic surface mount package

Applications

• S-Band Radar systems
• LTE Base Stations
• High Power Amplifier circuits

Procurement Notes

Verify the specific revision of the datasheet against the manufacturer's official documentation to ensure alignment with current manufacturing specifications. Confirm that the ordering suffix matches the required configuration, as variations may exist. Ensure all handling procedures comply with electrostatic discharge classifications provided in the technical data.

Selection Notes

Select this component when designing amplifiers requiring high output power in the S-Band spectrum. The internal input matching reduces external component count, while the unmatched output allows for custom impedance transformation. Consider the thermal resistance and case temperature limits when determining heat sinking requirements for continuous wave or pulsed operation.

Part Context

This part belongs to MACOM's GaN High Voltage series, designed for robust RF performance. The 'MP' designation indicates a plastic overmold package, distinguishing it from ceramic variants. It serves as a core active element for power amplification stages in communication infrastructure and defense electronics operating in the 2.7 to 3.5 GHz bands.

Replacement Considerations

Consult the manufacturer's official substitution guide for verified alternatives. Cross-referencing pinouts, thermal characteristics, and electrical ratings is essential before replacing this component with other GaN HEMTs.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage rating is 150 V at a case temperature of 25°C.

Is the output port internally matched?

No, the device features an internally pre-matched input but has an unmatched output, requiring external matching networks.

What is the typical saturated output power?

The typical saturated output power is 75 W under pulsed conditions (100μs pulse width, 10% duty cycle).