CGHV35120F

Overview

The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for S-band radar amplifier applications. It operates within the 2.9 to 3.8 GHz frequency range and delivers a rated output power of 120 W at a case temperature of 85°C. The device features a ceramic/metal flange package, supporting transient pulses from 100 μsec to 300 μsec at a 20% duty cycle. Typical drain efficiency reaches 62% at 85°C, with a power gain of approximately 13 dB.

Feature Summary

• Engineered for high efficiency, high gain, and wide bandwidth capabilities in S-band radar systems
• Supplied in a robust ceramic/metal flange package suitable for demanding thermal environments
• Features input matching and minimal pulsed amplitude droop for signal integrity
• Large signal models available for ADS and MWO simulation platforms

Applications

• S-Band Radar Systems
• Pulsed Amplifier Applications
• Defense Communications

Procurement Notes

Verify the specific application circuit requirements against the datasheet's typical performance conditions. Confirm that the operating case temperature does not exceed the maximum ratings provided. Ensure proper torque specifications are applied during installation to maintain thermal interface integrity. Check for updated documentation on MACOM's official support channels before finalizing procurement.

Selection Notes

Select this component when designing amplifiers requiring high output power density in the S-band spectrum. Consider the thermal management capabilities required to sustain the 120 W rating at elevated case temperatures. Evaluate the need for large signal models if utilizing ADS or MWO for circuit design. Ensure the system can accommodate the specified transient pulse widths and duty cycles.

Part Context

This device belongs to MACOM's portfolio of GaN HEMTs optimized for high-power RF applications. It utilizes advanced semiconductor technology to achieve superior performance metrics compared to traditional silicon-based transistors. The flange package design facilitates efficient heat dissipation, making it suitable for high-reliability radar systems.

Replacement Considerations

Consult MACOM technical support for verified substitute part numbers. Do not assume cross-compatibility with other GaN devices without reviewing electrical characteristics and pin configurations.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) rating is 150 V at 25°C.

Is the device compatible with standard ESD precautions?

Yes, the device has an ESD classification of HBM Class 1A and CDM Class 0CB.

What is the typical drain efficiency at 3.1 GHz?

The typical drain efficiency at 3.1 GHz is 68% under specified pulsed conditions.