CGHV35150F

Overview

The MACOM CGHV35150F is a gallium nitride (GaN) amplifier designed for high efficiency, gain, and wide bandwidth. It operates in the 3.1 to 3.5 GHz frequency range with a rated power of 180 W. The device features an input match and less than 0.3 dB pulsed amplitude droop. It utilizes a lead-free air cavity ceramic package compliant with RoHS standards.

Feature Summary

• High efficiency and high gain capabilities
• Wide bandwidth operation
• Input matched design
• Lead-free air cavity ceramic package

Applications

• S-Band Radar Systems

Procurement Notes

Verify the specific suffix against official documentation to confirm package type. The 'F' designation indicates a flange package variant. Confirm all electrical parameters align with the manufacturer's datasheet before integration into final designs.

Selection Notes

Select this component for applications requiring high output power within the S-band spectrum. Ensure thermal management meets junction temperature limits. Verify biasing sequences and RF protection circuits are implemented correctly to maintain device reliability.

Part Context

This part belongs to MACOM's GaN amplifier portfolio. It is engineered for radar systems. The device integrates high electron mobility transistor technology. It provides robust performance in demanding RF environments.

Replacement Considerations

Consult official MACOM documentation for direct substitutes. Cross-referencing requires matching frequency, power, and package specifications.