CGHV40050F

Overview

The CGHV40050F is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF and microwave applications up to 4.0 GHz. Operating from a 50 V rail, it delivers a typical saturated output power of 77 W at 1.8 GHz with 53% drain efficiency. The device features a small signal gain of 17.5 dB at 1.8 GHz and supports broadband operation. It is housed in a 2-lead flange package (Type 440193) suitable for surface mount assembly.

Feature Summary

• Unmatched GaN HEMT technology providing high power density and efficiency
• Broadband capability covering DC to 4.0 GHz frequency range
• High saturated output power reaching 77 W at 1.8 GHz
• Robust output mismatch stress tolerance up to 10:1 VSWR

Applications

• Narrow band UHF amplifiers
• L Band radar systems
• S Band radar systems
• Multi-octave bandwidth amplifiers up to 4 GHz

Procurement Notes

Verify the specific package type required for the application, as the CGHV40050 is available in both flange (CGHV40050F) and pill (CGHV40050P) configurations. Confirm that the design accounts for the absolute maximum ratings, particularly the junction temperature limit of 225°C and the case operating temperature range. Ensure proper thermal management is implemented to maintain reliability within the specified derating curves.

Selection Notes

Select the CGHV40050F when a 2-lead flange package is preferred for the design. This component is optimized for general-purpose broadband solutions requiring high efficiency and gain. Designers should utilize the provided source and load impedances for optimal performance across the 800 MHz to 2.0 GHz range. Consider the large signal models available for ADS and MWO during the simulation phase to validate circuit stability and power characteristics.

Part Context

The CGHV40050F belongs to MACOM's CGHV series of silicon-on-insulator GaN HEMTs. It is part of a family offering various power levels and frequency ranges for RF power amplifier designs. The 'F' suffix specifically denotes the 2-lead flange package (440193), distinguishing it from the pill package variant (CGHV40050P). This series is engineered for high reliability in demanding RF environments.

Replacement Considerations

No direct public substitute part numbers are documented for this specific component.

FAQ

What is the maximum drain-source voltage rating for the CGHV40050F?

The absolute maximum drain-source voltage (VDSS) rating is 150 V at a case temperature of 25°C.

Is the CGHV40050F stable across its entire frequency range?

Yes, the device exhibits unconditional stability (K-Factor > 1) across the DC to 4.0 GHz range, as indicated by the GMAX and K-Factor performance graphs.

What is the recommended quiescent drain current for typical operation?

Typical electrical characteristics and performance measurements are specified with a quiescent drain current (IDQ) of 0.3 A (300 mA).