CGHV40100P

CGHV40100P

$235.76
  • Description:RF MOSFET HEMT 50V 440206
  • Series:GaN

SKU:0bea12b913c3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V 440206
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:0Hz ~ 4GHz
  • Gain:11dB
  • Voltage - Test:50 V
  • Current Rating (Amps):8.7A
  • Noise Figure:-
  • Current - Test:600 mA
  • Power - Output:116W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:440206
  • Supplier Device Package:440206
  • Configuration:-

Download product information

CGHV40100P

Overview

The CGHV40100P is a gallium nitride (GaN) high electron mobility transistor (HEMT) from MACOM Technology Solutions. It operates up to 4.0 GHz and delivers 100 W typical output power with 50 V drain-source voltage. The device features 17.5 dB small signal gain at 2.0 GHz and 55% efficiency at saturation. It utilizes a pill package (Type 440206) and supports large signal models for ADS and MWO.

Feature Summary

  • Broadband operation capability extending up to 4.0 GHz
  • High power density delivering 100 W typical output
  • Robust performance under mismatched load conditions

Applications

  • Linear amplifier circuits
  • Compressed amplifier designs
  • General purpose RF and microwave systems

Procurement Notes

Verify the specific package type required, as the CGHV40100P denotes the pill variant while the F suffix indicates a flange configuration. Confirm that the application circuit design aligns with the thermal resistance specifications provided in the datasheet. Ensure proper handling procedures are followed due to the electrostatic discharge classification levels defined by JEDEC standards.

Selection Notes

Select this component when designing broadband RF amplifiers requiring high power output within a 50 V operating rail. The pill package offers distinct mechanical mounting requirements compared to the flange version. Evaluate thermal management strategies based on the junction-to-case thermal resistance values to ensure reliable operation under continuous wave conditions.

Part Context

This part belongs to the CGHV40100 family of GaN HEMTs manufactured by MACOM. The series provides general-purpose solutions for RF and microwave applications. The P suffix specifically identifies the pill package form factor, distinguishing it from the flange-mounted counterpart. Both variants share identical electrical characteristics and performance metrics.

Replacement Considerations

The CGHV40100F serves as the direct functional equivalent utilizing a flange package instead of the pill configuration. Designers must account for differences in mechanical mounting and thermal interface materials when substituting between these package types.

CGHV40100PCGHV40100P
$235.76
Buy Now