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The CGHV40100P is a gallium nitride (GaN) high electron mobility transistor (HEMT) from MACOM Technology Solutions. It operates up to 4.0 GHz and delivers 100 W typical output power with 50 V drain-source voltage. The device features 17.5 dB small signal gain at 2.0 GHz and 55% efficiency at saturation. It utilizes a pill package (Type 440206) and supports large signal models for ADS and MWO.
Verify the specific package type required, as the CGHV40100P denotes the pill variant while the F suffix indicates a flange configuration. Confirm that the application circuit design aligns with the thermal resistance specifications provided in the datasheet. Ensure proper handling procedures are followed due to the electrostatic discharge classification levels defined by JEDEC standards.
Select this component when designing broadband RF amplifiers requiring high power output within a 50 V operating rail. The pill package offers distinct mechanical mounting requirements compared to the flange version. Evaluate thermal management strategies based on the junction-to-case thermal resistance values to ensure reliable operation under continuous wave conditions.
This part belongs to the CGHV40100 family of GaN HEMTs manufactured by MACOM. The series provides general-purpose solutions for RF and microwave applications. The P suffix specifically identifies the pill package form factor, distinguishing it from the flange-mounted counterpart. Both variants share identical electrical characteristics and performance metrics.
The CGHV40100F serves as the direct functional equivalent utilizing a flange package instead of the pill configuration. Designers must account for differences in mechanical mounting and thermal interface materials when substituting between these package types.