CGHV40180F-AMP3

Overview

The CGHV40180F-AMP3 is an RF development tool and amplifier assembly designed for evaluating the CGHV40180F GaN HEMT. It operates within a frequency range of 960 MHz to 1250 MHz, supporting L-band applications. The assembly provides a standardized platform for characterizing high-power RF performance, including gain and output power metrics, under controlled conditions.

Feature Summary

• Provides a dedicated evaluation platform for the CGHV40180F GaN HEMT device
• Engineered for stable operation in the L-band frequency spectrum
• Facilitates accurate measurement of RF transistor characteristics

Applications

• L-band radar system development and testing
• Evaluation of GaN HEMT performance parameters
• RF amplifier circuit design verification

Procurement Notes

Verify that the specific AMP3 suffix denotes the amplifier assembly variant rather than the discrete component. Confirm compatibility with existing test fixtures and ensure the unit includes the necessary interconnects for the intended frequency range. Cross-reference the datasheet to validate pinout configurations against your evaluation setup requirements.

Selection Notes

Select this assembly specifically for validating the CGHV40180F device performance. It is intended for engineering evaluation rather than end-product integration. Ensure the required frequency coverage aligns with the 960-1250 MHz operational window. Consider thermal management solutions compatible with the assembly's power dissipation during testing phases.

Part Context

This item belongs to MACOM's portfolio of RF development tools, distinct from their discrete semiconductor offerings. It serves as a hardware reference design to accelerate the characterization of high-power GaN transistors. The assembly simplifies the testing process by providing pre-matched components and optimized layouts for reliable data acquisition.

Replacement Considerations

No public confirmed substitute part numbers are available for this specific amplifier assembly variant.