CGHV40180F

Overview

The CGHV40180F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 50 V rail, it delivers up to 2.0 GHz performance with a typical output power of 250 W at 900 MHz and 75% drain efficiency at saturation. The device features a small signal gain of 24 dB at 900 MHz and a power gain of 20 dB at the same frequency. It utilizes a 2-lead flange package (440223) and supports linear and compressed amplifier circuit topologies.

Feature Summary

• High-efficiency GaN HEMT technology enabling broad bandwidth capabilities
• Designed for linear and compressed amplifier circuit configurations
• Operates on a standard 50 volt supply rail

Applications

• Military Communications
• Public Safety VHF-UHF applications
• Radar systems
• Medical equipment
• Broadband Amplifiers

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the application environment remains within the absolute maximum ratings, particularly regarding junction temperature and soldering limits. Ensure proper electrostatic discharge handling protocols are followed during installation due to the device sensitivity classification.

Selection Notes

Select this component when designing amplifiers requiring high output power and wide bandwidth in the VHF/UHF range. The device is optimized for operation at 50 V with a quiescent current of 1.0 A. Consider thermal management requirements carefully, as the device dissipates significant power and requires adherence to derating curves based on case temperature.

Part Context

This part belongs to MACOM's CGHV series of Gallium Nitride High Voltage transistors. These devices utilize advanced GaN-on-SiC technology to provide superior power density and efficiency compared to traditional silicon LDMOS solutions. The CGHV series is engineered specifically for demanding RF power applications requiring robust performance across wide frequency bands.

Replacement Considerations

No direct public substitute part numbers are documented in the official datasheet.