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The CGHV40200PP is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 50 V rail, it delivers up to 200 W of output power with operation extending to 2.5 GHz. The device features a small signal gain of 21 dB at 1.8 GHz and achieves a saturated output power of 250 W at the same frequency. It offers a drain efficiency of 67% at saturation and maintains stability under output mismatch stress conditions.
Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the application environment adheres to the absolute maximum ratings, particularly regarding junction temperature and thermal resistance limits. Ensure proper electrostatic discharge handling procedures are followed during assembly and testing to prevent device damage.
Select this component for designs requiring high power density and wide bandwidth in the sub-3 GHz range. Evaluate the thermal management requirements carefully, as the device operates at high power levels and requires effective heat dissipation to maintain reliability within the specified case operating temperature range.
This part belongs to MACOM's CGHV series of Gallium Nitride on Silicon Carbide transistors. These devices are engineered to deliver industry-leading gain and efficiency compared to traditional silicon-based technologies. The CGHV40200PP specifically targets high-power applications where size and weight constraints are critical factors in system design.
Consult the manufacturer's product change notifications and cross-reference guides for verified substitute part numbers. Do not assume compatibility with other packages or voltage ratings without explicit confirmation from official MACOM documentation.