CGHV40200PP

CGHV40200PP

$388.26
  • Description:RF MOSFET HEMT 440199
  • Series:-

SKU:4812504dc880 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 440199
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:3GHz
  • Gain:20.1dB
  • Voltage - Test:-
  • Current Rating (Amps):18.7A
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:218W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:440199
  • Supplier Device Package:440199
  • Configuration:-

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CGHV40200PP

Overview

The CGHV40200PP is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 50 V rail, it delivers up to 200 W of output power with operation extending to 2.5 GHz. The device features a small signal gain of 21 dB at 1.8 GHz and achieves a saturated output power of 250 W at the same frequency. It offers a drain efficiency of 67% at saturation and maintains stability under output mismatch stress conditions.

Feature Summary

  • High-efficiency GaN HEMT technology providing broad bandwidth capabilities
  • Robust performance in linear and compressed amplifier circuits
  • Designed for general-purpose broadband RF and microwave solutions

Applications

  • Cellular infrastructure amplifiers
  • Broadband amplifier designs
  • Class A and AB linear amplifiers for complex waveforms
  • Test instrumentation equipment

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the application environment adheres to the absolute maximum ratings, particularly regarding junction temperature and thermal resistance limits. Ensure proper electrostatic discharge handling procedures are followed during assembly and testing to prevent device damage.

Selection Notes

Select this component for designs requiring high power density and wide bandwidth in the sub-3 GHz range. Evaluate the thermal management requirements carefully, as the device operates at high power levels and requires effective heat dissipation to maintain reliability within the specified case operating temperature range.

Part Context

This part belongs to MACOM's CGHV series of Gallium Nitride on Silicon Carbide transistors. These devices are engineered to deliver industry-leading gain and efficiency compared to traditional silicon-based technologies. The CGHV40200PP specifically targets high-power applications where size and weight constraints are critical factors in system design.

Replacement Considerations

Consult the manufacturer's product change notifications and cross-reference guides for verified substitute part numbers. Do not assume compatibility with other packages or voltage ratings without explicit confirmation from official MACOM documentation.

CGHV40200PPCGHV40200PP
$388.26
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