CGHV50200F

Overview

The CGHV50200F is a gallium nitride (GaN) amplifier operating from 4.4 to 5.0 GHz, delivering 180 W saturated power with 11.5 dB large signal gain and 48% drain efficiency at 40 V. It features internal 50 Ω matching for simplified integration. The device supports CW, pulse, and linear modes, utilizing a ceramic/metal flange package (type 440217). Designed for high-temperature operation, it meets RoHS standards and ensures ruggedness against output mismatches up to 3:1.

Feature Summary

• Internally matched to 50 ohms for ease of use
• High temperature operation capability
• Supports CW, pulse, and linear mode power amplifier operation

Applications

• Troposcatter Communications
• Beyond Line of Sight—BLOS
• Satellite Communications

Procurement Notes

Verify the specific revision status and datasheet version before procurement, as MACOM reserves the right to modify product information without notice. Confirm that the required evaluation test fixture or tuning solution aligns with your design requirements, as performance data is measured in specific fixtures. Ensure proper ESD handling procedures are followed during assembly due to static sensitivity.

Selection Notes

Select this component for C-Band applications requiring high power density and efficiency. The internal 50 Ω matching reduces external circuit complexity. Verify thermal management capabilities, as junction temperature calculations depend on case temperature and power dissipation. Ensure biasing sequences strictly follow the recommended ON/OFF protocols to prevent device damage.

Part Context

This part belongs to MACOM's GaN HEMT amplifier family designed for robust RF performance. It utilizes a ceramic/metal flange package (440217) suitable for high-power thermal management. The device is engineered for reliability in demanding communication environments, offering high ruggedness against mismatched loads.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum junction temperature for the CGHV50200F?

The maximum junction temperature is +225°C. Operating at nominal conditions with TJ ≤ +225°C ensures an MTTF greater than 1 x 10^6 hours.

How should the flange be connected in the 440217 package?

The flange on the package bottom must be connected to RF, DC, and thermal ground.

What is the recommended bias sequence for powering on the device?

Ensure RF is off, apply a -5 V pinch-off voltage to the gate, apply nominal drain voltage, bias the gate to the desired quiescent current, and then apply RF.