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Product Detailed Parameters
- Description：RF MOSFET HEMT 50V DIE
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：HEMT
- Frequency：6GHz
- Gain：17dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：65 mA
- Power - Output：40W
- Voltage - Rated：150 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：Die
- Supplier Device Package：Die
- Configuration：-
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Overview
The CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for operation up to 6.0 GHz. It delivers a typical saturated power output of 40 W and a typical power added efficiency of 65% at 50 V drain bias. The device provides 18 dB small signal gain at 4 GHz and 17 dB at 6 GHz. Key electrical characteristics include a drain-source breakdown voltage of 125 V, a gate pinch-off voltage of -3.0 V, and a maximum drain current of 3.2 A.
Feature Summary
- High breakdown voltage capability with 150 V absolute maximum drain-source rating
- Optimized for high power density and wide bandwidth applications
- Utilizes GaN-on-Si technology for superior thermal conductivity and electron drift velocity
- Designed as a bare die requiring eutectic die attach and wire bonding
Applications
- Cellular infrastructure base stations
- Class A linear amplifiers
- Class AB linear amplifiers
- Amplifiers supporting OFDM waveforms
- Amplifiers supporting W-CDMA, EDGE, and CDMA waveforms
Procurement Notes
Verify the specific revision level against the latest MACOM datasheet before finalizing design specifications. Confirm that the procurement includes Gel-Pak containers with non-adhesive tacky membranes for proper die immobilization during shipment. Ensure handling procedures account for the bare die format and electrostatic discharge sensitivity.
Selection Notes
Select this component when designing circuits requiring 40 W output power within the DC to 6.0 GHz frequency range. The device requires a 50 V operating bias and supports large-signal models compatible with ADS and MWO simulation environments. Designers must implement appropriate thermal management solutions given the junction-to-case thermal resistance specifications.
Part Context
This part belongs to the CGHV series of GaN HEMTs manufactured by MACOM Technology Solutions. The 'D' suffix indicates a bare die configuration rather than a packaged module. It utilizes silicon substrate technology, offering higher breakdown voltage and thermal conductivity compared to traditional silicon or gallium arsenide transistors.
Replacement Considerations
No direct public substitute part numbers are documented in the official datasheet. Designers should consult MACOM technical support for potential cross-references or updated product line replacements.
