CGHV96050F1

Overview

The CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC). It operates from 7.9 to 9.6 GHz with 50-ohm input and output matching. Typical performance at 7.9–8.4 GHz includes an output power of 80 W, power gain exceeding 13 dB, and Power Added Efficiency (PAE) of 33%. The device features less than 0.1 dB power droop and is housed in a metal/ceramic flanged package.

Feature Summary

• Internally matched for simplified integration
• High breakdown voltage and thermal conductivity
• Metal/ceramic flanged packaging

Applications

• Satellite Communication
• Terrestrial Broadband

Procurement Notes

Verify the manufacturer designation as Wolfspeed or Cree, as product lineage transitions occurred. Confirm the specific package type 440210 matches your mechanical constraints. Ensure that large signal models are available for ADS and MWO if simulation is required. Validate absolute maximum ratings against your operational limits.

Selection Notes

Select this component for X-band applications requiring high power density and wide bandwidth. Compare its internal matching capabilities against discrete matching solutions to reduce design complexity. Evaluate thermal resistance values to ensure adequate heat sinking for continuous wave operations within the specified case temperature range.

Part Context

This transistor belongs to the CGHV series of high-voltage GaN HEMTs. It utilizes Silicon Carbide substrates to achieve superior performance compared to silicon or gallium arsenide technologies. The series is designed for robust operation in demanding RF environments.

Replacement Considerations

CGHV96050F2

FAQ

What is the typical output power?

The typical output power is 80 W.

What is the operating frequency range?

The device operates from 7.9 to 9.6 GHz.

Is the device internally matched?

Yes, it features 50-ohm input and output matching.