ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET HEMT 40V 440210
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：HEMT
- Frequency：7.9GHz ~ 9.6GHz
- Gain：10dB
- Voltage - Test：40 V
- Current Rating (Amps)：6A
- Noise Figure：-
- Current - Test：500 mA
- Power - Output：70W
- Voltage - Rated：100 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：440210
- Supplier Device Package：440210
- Configuration：-
Download product information
Overview
The CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC). It operates in the 7.9 to 9.6 GHz range with 50-ohm input and output matching. The device provides 50 W of output power, 10 dB power gain, and 45% typical Power Added Efficiency (PAE). Absolute maximum ratings include a drain-source voltage of 120 V, gate-source voltage of -10 to +2 V, and a maximum junction temperature of 225 °C.
Feature Summary
- Internally matched for simplified RF circuit design
- High breakdown voltage and thermal conductivity
- Metal/ceramic flanged package for optimal performance
Applications
- Marine Radar
- Weather Monitoring
- Air Traffic Control
- Maritime Vessel Traffic Control
- Port Security
Procurement Notes
Verify the specific datasheet revision and manufacturing origin before procurement. Confirm that the ordering suffix matches the required frequency band and power specifications. Ensure compatibility with the metal/ceramic flanged package dimensions and mounting torque requirements during integration.
Selection Notes
Select this component for X-band applications requiring high power density and wide bandwidth. Evaluate thermal management capabilities against the specified junction-to-case thermal resistance. Verify that the operating voltage and current limits align with the system's power supply constraints and duty cycle requirements.
Part Context
This transistor belongs to the Cree GaN High Voltage series. It utilizes a silicon carbide substrate to enhance performance over traditional silicon or gallium arsenide technologies. The internal matching network simplifies amplifier design by providing 50-ohm impedance at both ports across the designated frequency range.
Replacement Considerations
CGHV96050F1
FAQ
What is the maximum drain-source voltage rating?
The absolute maximum drain-source voltage rating is 120 Volts.
Does the device feature internal matching?
Yes, the CGHV96050F2 includes 50-ohm input and output matching networks.
What is the typical Power Added Efficiency?
The typical Power Added Efficiency is 45% under standard test conditions.
Related recommended products
