CGHV96100F2

Overview

The CGHV96100F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) on Silicon Carbide (SiC) substrates, functioning as an internally matched power amplifier. It operates within the frequency range of 8.4 to 9.6 GHz and supports a drain-source voltage of 40 V. The device delivers an output power of 100 W with a typical power added efficiency of 45% and a power gain of 10 dB. It features a metal/ceramic flanged package designed for optimal electrical and thermal performance.

Feature Summary

• Internally matched to 50 Ω impedance
• High breakdown voltage and saturated electron drift velocity
• Superior thermal conductivity compared to silicon or gallium arsenide
• RoHS compliant

Applications

• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security

Procurement Notes

Verify the specific revision status against the latest MACOM datasheet before integration. Confirm that the application circuit utilizes the recommended test fixture or PCB layout to ensure accurate RF performance measurements. Ensure proper handling procedures are followed due to electrostatic discharge sensitivity ratings. Validate thermal management requirements align with the specified junction-to-case thermal resistance values.

Selection Notes

Select this component for X-band applications requiring high power density and wide bandwidths. Consider the metal/ceramic flanged package for superior heat dissipation in high-power scenarios. Evaluate the internal matching capabilities to simplify input and output network designs. Assess the operational temperature range and absolute maximum ratings to ensure reliability under varying environmental conditions.

Part Context

This part belongs to MACOM's GaN HEMT product line, leveraging SiC substrate technology for enhanced performance over traditional GaAs devices. It is designed to replace less efficient technologies like GaAs pHEMTs and unreliable traveling wave tubes in X-band power amplifiers. The component is available in bulk packaging, with a dedicated demonstration amplifier board offered for evaluation purposes.

Replacement Considerations

No public confirmed substitute part numbers are documented in the official datasheet.

FAQ

What is the operating frequency range of the CGHV96100F2?

The device operates within the frequency range of 8.4 to 9.6 GHz.

What type of substrate is used for this GaN HEMT?

The CGHV96100F2 utilizes a Silicon Carbide (SiC) substrate.

Is the device internally matched?

Yes, the FET is internally matched to 50 Ω.