CGHV96130F-AMP

Overview

CGHV96130F-AMP is a radio frequency development tool manufactured by MACOM Technology Solutions. It serves as an evaluation board for the CGHV96130F GaN HEMT transistor. The kit supports operation in the 8.4 to 9.6 GHz frequency range, designed for X-band radar applications. The included transistor utilizes silicon carbide substrate technology and features internal matching for optimized performance.

Feature Summary

• Provides a dedicated test platform for evaluating GaN HEMT transistor characteristics
• Supports high-power output with typical PAE of 40 percent
• Features metal-ceramic flange packaging for superior thermal management

Applications

• Marine radar systems
• Weather monitoring equipment
• Air traffic control infrastructure
• Maritime vessel traffic services
• Port security networks

Procurement Notes

Verify export compliance requirements before ordering, as this product may require additional documentation for shipment from the United States. Confirm RoHS status and specific package details directly with the manufacturer or authorized distributor. Ensure compatibility with existing RF test setups and cooling solutions suitable for high-power GaN devices.

Selection Notes

Select this development kit when characterizing the electrical performance of the CGHV96130F device. It is intended for engineering validation rather than end-product integration. Consider thermal handling capabilities and impedance matching requirements during the design phase. Verify that the evaluation environment supports the necessary bias conditions and signal generation for accurate testing.

Part Context

This component belongs to MACOM's portfolio of Gallium Nitride on Silicon Carbide (GaN-on-SiC) high electron mobility transistors. These devices are engineered for high power density and wide bandwidth applications. The CGHV series specifically targets X-band frequencies, offering advantages over traditional GaAs technologies through higher breakdown voltage and improved thermal conductivity.

Replacement Considerations

Consult official MACOM documentation for direct substitute part numbers. Evaluate alternative GaN HEMTs based on frequency range, power output, and package compatibility. Ensure any replacement maintains the required internal matching and thermal performance specifications for X-band radar implementations.