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The CHB011M12GM4 is a 1200 V Silicon Carbide T-Type power module featuring Gen4 technology with a soft body diode. It offers a typical on-state resistance of 11 mΩ and supports a continuous drain current of 100 A at a heatsink temperature of 50 °C. The module utilizes press-fit pins for assembly and includes an integrated NTC thermistor with a rated resistance of 5.0 kΩ at 25 °C. Stray inductance between MID and DC+ is 17.5 nH, while the junction-to-heatsink thermal resistance is 0.472 °C/W. The unit weighs 39 g and provides a case isolation voltage of 3 kV AC.
Verify the specific ordering suffix to confirm the inclusion of pre-applied phase change thermal interface material. The standard CHB011M12GM4 does not include this material, whereas the CHB011M12GM4T variant does. Ensure compatibility with recommended gate driver boards such as the CGD1700HB2M-UNA-R1 for dynamic performance evaluation. Confirm that mounting torque specifications are strictly adhered to during installation.
Select this module for applications requiring high-frequency operation and low switching losses. The 1200 V rating and 100 A continuous current capability suit medium-power industrial and automotive systems. Consider the soft body diode feature for improved reverse recovery performance. Verify that the system design accommodates the specified stray inductance values to optimize switching efficiency and minimize voltage overshoot.
This component belongs to the WolfPACK series of silicon carbide power modules from Wolfspeed. It represents the fourth generation (Gen4) of their SiC technology, specifically optimized for high efficiency and compact system designs. The T-type configuration allows for flexible integration into various power electronic topologies, supporting both high-voltage and high-current requirements in modern power conversion systems.
Public confirmed substitute part numbers are not available in the provided documentation.