CLF1G0035-200PU

$378.73

Description：RF MOSFET GAN HEMT
Series：-

SKU:8b3b5ed510b4 Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET GAN HEMT
Series：-
Mfr：Ampleon USA Inc.
Package：Tray
Technology：GaN HEMT
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Current Rating (Amps)：-
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Power - Output：-
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Supplier Device Package：-
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CLF1G0035-200PU

Overview

The Ampleon CLF1G0035-200PU is a broadband RF power GaN HEMT transistor designed for high-efficiency signal amplification. It operates from DC to 3.5 GHz with a typical drain efficiency of 44%. The device delivers a maximum drain-source voltage of 150V and features a forward transconductance of 4S. Classified as a depletion-mode N-channel component, it provides robust performance for general-purpose applications requiring reliable wideband RF output.

Feature Summary

Broadband operation spanning DC to 3.5 GHz
High-power GaN HEMT technology for efficient amplification
Depletion-mode N-channel configuration

Applications

General-purpose broadband RF power amplification
Industrial radio frequency systems
Wideband communication infrastructure

Procurement Notes

Verify the specific suffix 'PU' against official Ampleon documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with thermal management requirements for 150V operation. Cross-reference the datasheet for pulsed versus continuous wave ratings to validate application suitability.

Selection Notes

Select this component for designs requiring wide bandwidth up to 3.5 GHz. Consider the 150V drain-source rating for high-power needs. Evaluate thermal dissipation capabilities due to the 44% efficiency rating. Confirm that the depletion-mode characteristic aligns with the circuit biasing strategy.

Part Context

This part belongs to the CLF1G0035 series of GaN HEMTs from Ampleon. It shares the same frequency range and core technology as lower-power variants like the CLF1G0035-50 but offers higher voltage handling. The series is engineered for general-purpose broadband applications requiring robust RF performance.