CLF1G0035S-100PU

Overview

The CLF1G0035S-100PU is a 100 W general purpose broadband GaN HEMT usable from DC to 3.5 GHz. It operates at VDS = 50 V with IDq = 330 mA in class-AB mode. Typical performance includes 12.8 dB power gain and 51% drain efficiency at 2500 MHz under CW conditions. The device features an earless flanged ceramic package (SOT1228B) with four leads and a connected-to-flange drain configuration. Thermal resistance from junction to case is 1.02 K/W, and it withstands VSWR up to 10:1.

Feature Summary

• Broadband operation spanning DC to 3.5 GHz
• High ruggedness supporting VSWR of 10:1
• Earless flanged ceramic package for thermal enhancement

Applications

• Commercial wireless infrastructure
• Industrial, scientific, medical equipment
• Radar systems
• Jammers
• Public mobile radios

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and testing status. Ensure compatibility with SOT1228B footprint requirements during design integration. Confirm ESD sensitivity handling protocols are strictly followed due to Class 1B classification.

Selection Notes

Select this component for high-power applications requiring wide bandwidth without retuning. Evaluate thermal management capabilities given the 1.02 K/W junction-to-case resistance. Verify impedance matching networks align with the provided load-pull data for optimal power transfer across the frequency range.

Part Context

This part belongs to the CLF1G0035 series of GaN HEMTs designed for general-purpose RF amplification. It shares core electrical characteristics with the CLF1G0035-100P but utilizes a distinct earless flanged package format suitable for specific mounting constraints.

Replacement Considerations

CLF1G0035-100P offers identical electrical specifications but uses a flanged package with two mounting holes instead of the earless design.