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The CLF1G0035S-50,112 is a broadband general-purpose 50 W amplifier utilizing first-generation GaN HEMT technology. It operates from DC to 3.5 GHz and supports both pulsed RF (tp = 100 µs; δ = 10%) and 2-Tone CW (Δf = 1 MHz) signals. Typical performance at Tcase = 25 °C, IDq = 150 mA, and VDS = 50 V includes a power gain of 12 dB to 14 dB and drain efficiency up to 65%. The device withstands a load mismatch corresponding to VSWR = 10:1 through all phases. It is housed in an earless ceramic package (SOT467B) with two leads.
Verify the specific ordering suffix
Select this component for designs requiring a single-device solution covering DC to 3.5 GHz. Ensure the bias circuit provides VDS = 50 V and accounts for the required quiescent current (IDq). Verify thermal management capabilities to maintain Tcase within limits, as junction temperature measurement relies on IR scanning. Confirm impedance matching networks align with the provided source and load pull data for optimal power transfer.
This part belongs to the CLF1G0035 series, which includes the flanged version CLF1G0035-50. Both variants share identical electrical characteristics but differ in mechanical packaging. The SOT467B package used here is an earless ceramic design with two leads, distinct from the flanged SOT467C variant. This family represents Ampleon's first-generation GaN HEMT technology for broadband RF power applications.
The datasheet does not list official substitute part numbers. Designers should evaluate other Ampleon GaN HEMTs based on frequency range, output power, and package compatibility. Cross-referencing with NXP or Amphenol listings found in distributor databases may identify functionally similar devices, but direct substitution requires independent verification of pinout and electrical parameters.