CLF1G0060S-10U

Overview

The CLF1G0060S-10U is a general-purpose broadband Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by Ampleon. It operates from DC to 6.0 GHz and delivers 10 W of output power. The device features a drain-source voltage rating of 150 V, with typical operation at 50 V. It utilizes an SOT1227B earless flanged ceramic package for thermal management. Key RF characteristics include a power gain of 13.5 dB to 16 dB and a drain efficiency up to 52% under pulsed conditions. The component exhibits excellent ruggedness, supporting a Voltage Standing-Wave Ratio (VSWR) of 10:1.

Feature Summary

• Broadband frequency coverage extending from DC to 6.0 GHz
• High operational voltage capability with 150 V drain-source breakdown
• Robust load mismatch tolerance rated for 10:1 VSWR
• Thermally enhanced earless flanged ceramic packaging

Applications

• Commercial wireless infrastructure including cellular and WiMAX systems
• Industrial, scientific, and medical (ISM) radio band equipment
• Radar and jamming systems
• Public mobile radios and defense applications
• Electromagnetic compatibility (EMC) testing equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm that the required version matches the intended application requirements. Cross-reference the part number with official distributor catalogs to validate authenticity. Ensure all handling procedures comply with Electrostatic Discharge (ESD) sensitivity Class 1B guidelines during assembly.

Selection Notes

Select this component for designs requiring wide bandwidth without retuning across the DC to 6.0 GHz range. The high voltage rating supports robust operation in class-AB configurations. Evaluate the thermal resistance of 4.6 K/W for heat sink design. Consider the SOT1227B package dimensions for PCB layout constraints. Verify impedance matching networks against the provided load pull data for optimal performance.

Part Context

This model belongs to the CLF1G0060 series of broadband GaN HEMTs. It shares core electrical specifications with the CLF1G0060-10 variant, which utilizes the SOT1227A package. The primary distinction lies in the physical mounting structure; the S-10 variant uses an earless flanged design suitable for specific chassis integration needs while maintaining identical RF performance metrics.

Replacement Considerations

The CLF1G0060-10 serves as a functional equivalent within the same product family. Substitution requires verifying the mechanical footprint differences between the SOT1227A and SOT1227B packages. Electrical parameters remain consistent between these variants.