CLF24H4LS300PU

CLF24H4LS300PU

$172.39
  • Description:CLF24H4LS300P/SOT1214/TRAY
  • Series:-

SKU:95d8f0353a98 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:CLF24H4LS300P/SOT1214/TRAY
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:GaN-SiC HEMT
  • Frequency:2.4GHz ~ 2.5GHz
  • Gain:15dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:2.6 A
  • Power - Output:300W
  • Voltage - Rated:150 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1214B
  • Supplier Device Package:LDMOST
  • Configuration:2 N-Channel (Dual) Common Source

Download product information

CLF24H4LS300PU

Overview

The CLF24H4LS300PU is a Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (GaN-SiC HEMT) power transistor manufactured by Ampleon. It is optimized for continuous wave (CW) power and efficiency in the 2400 MHz to 2500 MHz frequency range. The device operates with a drain-source voltage of 50 V and delivers up to 320 W CW output power with 74% drain efficiency. It features an internally matched input and is housed in a high-performance SOT1214B ceramic package.

Feature Summary

  • High efficiency optimized for continuous wave applications
  • Excellent ruggedness under CW and pulsed conditions
  • Broadband operation capability from 2400 MHz to 2500 MHz
  • Internally input matched design

Applications

  • Commercial cooking RF power amplifiers
  • Industrial heating RF power amplifiers
  • Scientific equipment RF power amplifiers
  • Medical application RF power amplifiers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation, as packaging options vary between tray and reel formats. Confirm that the component meets RoHS compliance requirements for your intended market. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to the device's sensitivity classification.

Selection Notes

Select this component for designs requiring high power density and efficiency in the ISM band around 2.45 GHz. The internal matching simplifies circuit design but requires adherence to specified impedance values. Evaluate thermal management capabilities carefully, as the active die channel temperature limit is 225 °C. Verify that the load pull impedances match the target application's operating frequency within the 2400 MHz to 2500 MHz range.

Part Context

This GaN-SiC HEMT belongs to Ampleon's portfolio of RF power transistors designed for high-efficiency broadband applications. It utilizes advanced semiconductor technology to achieve superior performance compared to traditional silicon-based devices. The SOT1214B package provides robust mechanical stability and efficient heat dissipation for demanding industrial environments.

Replacement Considerations

Consult official Ampleon documentation for qualified replacement part numbers. Direct substitutes may require re-evaluation of thermal resistance and impedance matching networks due to potential differences in pin configurations or electrical characteristics.

CLF24H4LS300PUCLF24H4LS300PU
$172.39
Buy Now