SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CLF3H0035-100U is a 100 W general-purpose, unmatched broadband Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by Ampleon. It operates in the frequency range from DC to 3.5 GHz and utilizes a thermally enhanced SOT467C package suitable for both continuous wave and pulsed applications. The device features a drain-source voltage rating of 150 V and an active die channel temperature limit of 300 °C. Typical RF performance at 2500 MHz includes a power gain of 12.8 dB, drain efficiency of 57.0%, and output power of 160.0 W under maximum power load conditions.
Verify the specific ordering part number CLF3H0035-100U against the required package type SOT467C. Confirm that the non-dry pack tray quantity meets project requirements. Ensure compliance with ESD handling standards C2B and 1A during storage and assembly processes.
Select this component for designs requiring high power density across a wide bandwidth up to 3.5 GHz. Consider the SOT467C flanged ceramic package for effective heat dissipation. Evaluate impedance matching networks based on the provided typical load-pull data for optimal power and efficiency targets.
This GaN HEMT belongs to the CLF3H0035 series, which also includes the earless variant CLF3H0035S-100U in package SOT467B. Both variants share identical electrical specifications but differ in mechanical mounting configurations. The series is designed for robust performance in demanding RF environments.
The CLF3H0035S-100U serves as a direct functional equivalent with an earless SOT467B package. Verify mechanical fit and thermal interface compatibility when substituting between the flanged SOT467C and earless SOT467B packages.