SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CLF3H0060-30U is a 30 W general purpose, unmatched broadband GaN-SiC HEMT transistor from Ampleon. It operates in the frequency range from DC to 6.0 GHz and utilizes a thermally enhanced package suitable for both CW and pulsed applications. The device is housed in an SOT1227A flanged ceramic package with three pins: drain, gate, and source. Key electrical characteristics include a drain-source breakdown voltage of 150 V, a maximum junction temperature of 225 °C, and a typical forward transconductance of 1.22 S. RF performance data indicates a power gain between 14.87 dB and 20.57 dB across tested frequencies, with drain efficiency ranging from 47.37% to 67.80% depending on operating conditions.
Verify the specific ordering suffix 'U' against the manufacturer's current documentation to confirm packing details, as datasheets may reference tray configurations. Ensure compatibility with the SOT1227A package outline during PCB layout. Confirm RoHS compliance status through official Ampleon channels prior to final procurement decisions.
Select this component for designs requiring a 30 W output power level across a broad frequency spectrum up to 6.0 GHz. Consider the SOT1227A package dimensions and thermal requirements when designing the heat sinking solution. Evaluate the need for large signal models in ADS or MWO for accurate circuit simulation before finalizing the design.
This part belongs to the CLF3H0060 series of broadband RF power GaN HEMTs manufactured by Ampleon. It shares functional similarities with the CLF3H0060S-30 variant, which differs primarily in its SOT1227B earless flanged ceramic package configuration. Both devices target similar high-efficiency, wideband RF power amplification markets.
The CLF3H0060S-30U is a direct alternative within the same product family, differing only in the SOT1227B earless package. Verify mechanical footprint compatibility and thermal interface requirements when substituting between the SOT1227A and SOT1227B packages.