CLF3H0060S-30U

CLF3H0060S-30U

$128.75
  • Description:RF MOSFET HEMT 50V SOT1227B
  • Series:-

SKU:9b80dc37b738 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V SOT1227B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:HEMT
  • Frequency:0Hz ~ 6GHz
  • Gain:17dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:60 mA
  • Power - Output:30W
  • Voltage - Rated:150 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1227B
  • Supplier Device Package:SOT1227B
  • Configuration:-

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CLF3H0060S-30U

Overview

The CLF3H0060S-30U is a 30 W general purpose, unmatched broadband GaN-SiC HEMT transistor from Ampleon. It operates in the frequency range from DC to 6.0 GHz and utilizes a thermally enhanced package suitable for both CW and pulsed applications. Key electrical parameters include a drain-source voltage (VDS) of 50 V, a drain-source breakdown voltage (V(BR)DSS) of 150 V, and a gate-source threshold voltage (VGS(th)) of -2.9 V. The device features an input capacitance (Ciss) of 6.06 pF and an output capacitance (Coss) of 3.17 pF at 1 MHz. Thermal characteristics show a thermal resistance from active die surface to case (Rth(s-c)(IR)) of 3.2 K/W and from channel to case (Rth(ch-c)(FEA)) of 5.6 K/W.

Feature Summary

  • Broadband operation capability spanning from DC to 6.0 GHz
  • High efficiency performance with low thermal resistance
  • Excellent ruggedness designed for demanding RF environments
  • Thermally enhanced package supporting continuous wave and pulsed modes

Applications

  • General purpose broadband RF power amplification
  • CW applications requiring high efficiency
  • Pulsed RF applications

Procurement Notes

Verify the specific ordering suffix 'U' against the manufacturer's current documentation to confirm packing details. The datasheet indicates this part is available in a tray format with a minimum orderable quantity of 20 pieces. Ensure compatibility with SOT1227B footprints during procurement planning.

Selection Notes

Select this component for designs requiring a single-device solution covering DC to 6.0 GHz. Consider the 50 V drain-source voltage limit and the -8 V to +2 V gate-source voltage range when designing bias circuits. The SOT1227B package requires appropriate mounting hardware for the flange connection.

Part Context

This model belongs to the CLF3H0060 series of GaN-SiC HEMTs. The 'S' variant denotes the SOT1227B earless flanged ceramic package, distinct from the SOT1227A version. Both variants share identical electrical specifications but differ in physical mounting configurations.

Replacement Considerations

The CLF3H0060-30U serves as the primary alternative within the same product family, differing only in the SOT1227A package outline.

CLF3H0060S-30UCLF3H0060S-30U
$128.75
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