CLL3H0914LS-700U

Overview

The CLL3H0914LS-700U is a 700 W internally pre-matched RF GaN-SiC HEMT power transistor designed for the 0.9 GHz to 1.4 GHz frequency range. It features an internal stability network and excellent thermal resistance suitable for short- and long-pulse applications. The device operates with a drain-source voltage of 50 V, delivering up to 800 W output power with 17 dB gain at 1200 MHz to 1400 MHz. It utilizes a SOT502B earless flanged ceramic package with a maximum channel temperature of 225 °C.

Feature Summary

• Internally pre-matched GaN-SiC HEMT with integrated stability network
• High efficiency performance optimized for avionics applications
• Excellent ruggedness capable of withstanding high load mismatch conditions

Applications

• Avionics systems requiring high-efficiency short-pulse operation
• Long-pulse RF amplifier designs in the L-band
• Rugged RF power amplification in class-AB operation

Procurement Notes

Verify the specific ordering suffix 'U' against the manufacturer's current documentation to confirm packing details and compliance status. Ensure that the SOT502B package variant matches the intended PCB footprint requirements. Confirm RoHS compliance data directly from the official product details page before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high power density in the 0.9 GHz to 1.4 GHz band. The internal matching network simplifies circuit design compared to unmatched devices. Consider the thermal management capabilities provided by the flanged ceramic package when designing heat sinks for continuous or pulsed duty cycles exceeding standard limits.

Part Context

This part belongs to the CLL3H0914L(S)-700 series of L-band internally pre-matched GaN-SiC HEMTs. The 'S' designation indicates the SOT502B earless flanged package variant, distinct from the SOT502A flanged package found in the CLL3H0914L-700 model. Both variants share identical electrical characteristics and performance curves.

Replacement Considerations

CLL3H0914L-700U (SOT502A package)

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the typical drain efficiency at 1300 MHz?

At 1300 MHz with 750 W output power, the typical drain efficiency is 71%.

How is the gate-source threshold voltage defined?

The typical gate-source threshold voltage is -2.9 V, measured at VDS = 6 V and IDS = 1080 mA.