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The CM100TU-24F is a Powerex Inc. IGBT module belonging to the IGBTMOD series, designed for high-power switching applications. It features a half-bridge configuration with two N-channel IGBT transistors and integrated anti-parallel diodes. The device supports a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 100 A. Key electrical parameters include a saturation voltage (Vce(on)) of 2.5 V at 15 V gate drive and 100 A collector current, an input capacitance of 23 nF at 10 V, and a maximum power dissipation of 650 W. The module operates within a junction temperature range of -40°C to 150°C and utilizes chassis mounting.
Verify component authenticity through authorized Powerex distributors or direct manufacturer channels. Confirm part status as discontinued at major retailers like DigiKey by checking current supplier catalogs. Ensure documentation matches the specific suffix 'NF' for correct pinout and packaging specifications before procurement.
Select this module for applications requiring 1200 V blocking voltage and 100 A continuous current handling. Evaluate thermal resistance requirements against the 650 W maximum power dissipation limit. Compare input capacitance and switching characteristics against system drive capabilities to ensure compatibility with standard gate driver circuits.
This component is part of the Powerex IGBTMOD family, which provides robust solutions for power conversion. The CM100TU-24F shares architectural similarities with other half-bridge modules in the series, such as the CM100DY-24NF, offering comparable voltage and current ratings for interchangeable design considerations where available.
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official Powerex documentation for cross-reference lists or equivalent series components that meet identical electrical and mechanical specifications.