CM200DY-12H

CM200DY-12H

  • Description:IGBT MOD 600V 200A 780W
  • Series:IGBTMOD™

SKU:6340408948bb Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 600V 200A 780W
  • Series:IGBTMOD™
  • Mfr:Powerex Inc.
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 200A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):200 A
  • Power - Max:780 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:20 nF @ 10 V

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CM200DY-12H

Overview

The CM200DY-12H is a dual IGBT module manufactured by Powerex Inc. under the IGBTMOD series, designed for high-power switching applications. It features a half-bridge configuration with two N-channel IGBTs and integrated reverse-connected super-fast recovery free-wheel diodes. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 200 A. It utilizes an isolated baseplate for simplified thermal management and system assembly. The module operates at frequencies between 20-25 kHz and offers low drive power requirements.

Feature Summary

  • Half-bridge topology with integrated super-fast recovery free-wheel diodes
  • Isolated baseplate design for simplified heat sinking and assembly
  • Optimized for high-frequency operation up to 25 kHz
  • Low saturation voltage and reduced drive power consumption

Applications

  • AC motor control systems
  • Motion and servo control drives
  • Uninterruptible Power Supplies (UPS)
  • Welding power supplies
  • Laser power supplies

Procurement Notes

Verify component authenticity through authorized Powerex distributors or direct manufacturer channels due to potential counterfeit risks in the power semiconductor market. Confirm RoHS compliance status and specific manufacturing date codes against project requirements. Ensure proper handling procedures are followed to prevent electrostatic discharge damage during installation and storage.

Selection Notes

Select this module for applications requiring robust half-bridge switching capabilities at 600V and 200A. Consider the thermal resistance characteristics when designing the heatsink interface. Verify that the gate drive circuitry matches the required voltage levels and current sourcing capabilities for reliable switching performance within the specified frequency range.

Part Context

This component belongs to the IGBTMOD family from Powerex, which specializes in insulated gate bipolar transistor modules for industrial power electronics. The series is characterized by high reliability and standardized packaging for easy integration into various power conversion architectures. It represents a mature technology platform widely used in medium-power industrial drives and power supply designs.

Replacement Considerations

Cross-reference with Mitsubishi Electric CM200DY-12H as it shares identical specifications and pinout configurations. Verify mechanical dimensions and thermal interface requirements before substitution. Ensure electrical parameters such as Vce(sat) and switching times match the original design constraints.

CM200DY-12HCM200DY-12H

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