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Product Detailed Parameters
- Description：IGBT MOD 1200V 200A 1130W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：1130 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：47 nF @ 10 V
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Overview
The CM200DY-24NF is a half-bridge Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. It features a 1200 V collector-emitter breakdown voltage and supports a maximum continuous collector current of 100 A. The device has a maximum power dissipation rating of 650 W and an on-state collector-emitter voltage of 2.5 V at 15 V gate drive and 100 A collector current. Input capacitance is specified as 23 nF at 10 V. The module operates within a junction temperature range of -40°C to 150°C, utilizes chassis mounting, and contains no integrated NTC thermistor.
Feature Summary
- Half-bridge configuration with built-in diodes for efficient switching applications
- Chassis mount package design for robust mechanical integration
- High thermal stability supporting operation up to 150°C junction temperature
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter systems
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm pinout and terminal compatibility. Confirm availability status as distribution channels may list this component as discontinued or obsolete. Request manufacturer documentation directly to validate electrical parameters before integration into designs.
Selection Notes
Select this module for applications requiring 1200 V blocking capability and 100 A current handling in a compact form factor. Ensure the cooling system can manage 650 W of power dissipation effectively. Verify that the gate drive circuit provides the required 15 V swing for optimal saturation characteristics.
Part Context
This component belongs to the IGBTMOD series from Powerex Inc., designed for high-power switching environments. It serves as a discrete semiconductor solution for converting and controlling electrical energy in industrial and commercial power electronics systems.
Replacement Considerations
Cross-reference with CM100DY-24A for similar voltage and current ratings but verify pinout differences. Check CM600DU-24NFH for higher current capacity options within the same manufacturer portfolio.
