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The CM300E3U-12H is a high-voltage Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. It features an N-channel configuration with a maximum collector current of 300 A and a collector-emitter breakdown voltage of 1200 V. The component utilizes a MODULE-9 package, specifically designed for flange mounting with an isolated case connection. This complex configuration integrates two internal elements within a rectangular housing, supporting operation at temperatures up to 150 °C.
Verify the specific suffix '12H' against official manufacturer documentation to confirm exact electrical ratings and pinout compatibility. Ensure that the sourcing channel provides original manufacturer traceability. Confirm RoHS compliance status separately, as historical data indicates potential variations in lead content for this series.
Select this module when a 1200 V rating and 300 A continuous current capacity are required. The MODULE-9 form factor dictates the mechanical footprint and cooling strategy. Verify that the gate drive requirements align with standard IGBT specifications for this voltage class before integration into the control board.
This component belongs to the CM300E3U series of insulated gate bipolar transistors. It represents a specific voltage variant within the broader family of high-power switching modules produced by Powerex. The series is engineered for applications necessitating reliable high-current handling and high-voltage blocking capabilities in compact industrial packages.
Direct replacements must match the 300 A / 1200 V specification and the MODULE-9 physical dimensions. Cross-reference with Mitsubishi Electric CM300E3U variants if available, ensuring identical pin configurations and thermal characteristics.