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The CM50TF-24H is a six-IGBT power module from the IGBTMOD™ H-Series manufactured by Powerex Inc. It features a three-phase bridge configuration with discrete super-fast recovery free-wheel diodes. The device supports a collector-emitter voltage of 1200V and a continuous collector current of 50A. Key electrical parameters include a typical saturation voltage of 2.5V at 50A, a gate threshold voltage range of 4.5V to 7.5V, and a total gate charge of 250nC. Thermal characteristics specify a junction-to-case resistance of 0.31°C/W for the IGBT and 0.70°C/W for the diode.
Verify component authenticity through authorized Powerex channels or certified distributors. Confirm manufacturing date codes and lot numbers against project requirements. Ensure proper handling procedures are followed due to the sensitivity of semiconductor junctions. Review datasheet specifications for storage temperature limits prior to installation.
Select this module based on the required 1200V blocking capability and 50A continuous current rating. Evaluate thermal resistance values against the expected heat sink performance to maintain junction temperatures within the -40°C to 150°C operating range. Consider the switching frequency capabilities when designing gate drive circuits and snubber networks.
This component belongs to the IGBTMOD™ H-Series line of power modules designed for industrial switching applications. The series provides integrated solutions for three-phase inverters, combining multiple semiconductor elements into a single chassis-mountable package for efficient power conversion.
No direct public substitute part numbers are documented for this specific model. Cross-referencing requires matching voltage ratings, current capacities, pin configurations, and thermal characteristics with alternative manufacturers' offerings.