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The CM50TU-24H is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. It features a dual IGBT configuration with integrated anti-parallel diodes, rated for a collector current of 50 A and a collector-emitter breakdown voltage of 1200 V. The component utilizes an insulated flange-mount package design to facilitate thermal management in industrial applications. Key electrical parameters include a maximum junction temperature of 150 °C and compliance with lead-free manufacturing standards.
This component belongs to the CM series of medium-power IGBT modules from Powerex. It shares the same pinout and mechanical footprint as other variants in the family, such as the CM50DU-24H, allowing for potential form-factor compatibility within designs requiring 50A/1200V ratings.
Verify switching characteristics against alternatives like the CM50DU-24H. Ensure the replacement part matches the specific saturation voltage and switching speed requirements of the original design.