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The CM600HA-28H is a single IGBTMOD™ H-Series power module manufactured by Powerex, Inc. It integrates one N-channel Insulated Gate Bipolar Transistor and a discrete super-fast recovery free-wheel diode in a single configuration. The device features an isolated baseplate for simplified thermal management. Key electrical ratings include a collector-emitter voltage (V_CES) of 1400 Volts and a continuous collector current (I_C) of 600 Amperes at Tj = 25 °C. The maximum junction temperature is 150 °C, with a typical collector-emitter saturation voltage of 3.1 V at 600 A and 15 V gate drive.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact mechanical dimensions and terminal configurations. Ensure that the mounting torque specifications for M8 terminals (95 in-lb) and M6 screws (26 in-lb) are strictly adhered to during installation to prevent mechanical failure or compromised electrical isolation.
Select this module for applications requiring high voltage blocking capability up to 1400 V and high current handling up to 600 A. Consider the thermal resistance values (0.03 °C/W for IGBT, 0.06 °C/W for FWDi) when designing the heat sinking solution. Verify that the operating frequency falls within the recommended 20-25 kHz range to ensure optimal switching performance and efficiency.
This component belongs to the Powerex IGBTMOD™ H-Series, which is designed for robust switching applications. The series utilizes advanced packaging to provide electrical isolation between the components and the heat-sinking baseplate. The H-Series modules are engineered to offer improved thermal performance and reliability compared to standard discrete packages, making them suitable for demanding industrial power electronics environments.
No public confirmed substitute part numbers are available in the provided documentation. Direct replacements must be verified against mechanical footprint compatibility and electrical parameter equivalence with the original manufacturer.
The maximum peak collector current (I_CM) is rated at 1200 Amperes, provided the pulse width and repetition rate ensure the junction temperature does not exceed the specified limit.
The discrete super-fast recovery free-wheel diode has a reverse recovery time (t_rr) of 135 nanoseconds.
The module provides an isolation voltage (V_Isolation) of 2500 Volts RMS between the electrical terminals and the baseplate.