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The Powerex CM75TF-24H is a six-IGBT Intelligent Power Module (IPM) from the IGBTMOD™ H-Series, designed for high-power switching applications. It integrates three-phase bridge configuration with discrete super-fast recovery free-wheel diodes. The module features an isolated baseplate for simplified thermal management and system assembly. Key electrical ratings include a collector-emitter voltage of 1200V and a continuous collector current of 75A. It supports high-frequency operation between 20kHz and 25kHz with low drive power requirements.
Verify the specific part number CM75TF-24H against manufacturer documentation to confirm availability and lead times. Ensure that the ordering suffix matches the required specifications exactly. Check for any updated datasheets or replacement notices before procurement. Confirm compliance with relevant industry standards and environmental regulations applicable to your region.
Select this module for applications requiring a six-IGBT three-phase bridge configuration. Consider the 1200V collector-emitter voltage and 75A continuous current rating for load compatibility. Evaluate the thermal resistance values and mounting torque requirements for proper heat sink integration. Verify gate drive voltage levels match the specified ±20V maximum rating.
This component belongs to the Powerex IGBTMOD™ H-Series line of intelligent power modules. These modules are engineered for robust performance in industrial switching environments. The series typically offers integrated protection features and optimized thermal characteristics for high-density power electronics designs.
Consult official Powerex documentation for direct replacements. Verify pinout compatibility and electrical ratings when considering alternative manufacturers. Ensure thermal interface material specifications align with the new component's requirements.
The peak collector current (ICM) is rated at 150 Amperes, provided the pulse width and repetition rate keep the junction temperature within limits.
The module provides an isolation voltage (VRMS) of 2500 Volts between the terminals and the baseplate.
The thermal resistance from junction to case (Rth(j-c)) per IGBT is typically 0.21 °C/W.