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Product Detailed Parameters
- Description：SICFET N-CH 1200V 24A TO247
- Series：Z-FET™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：220mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id：4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 20 V
- Vgs (Max)：+25V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：928 pF @ 800 V
- FET Feature：-
- Power Dissipation (Max)：134W (Tc)
- Operating Temperature：-55°C ~ 135°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The CMF10120D is a silicon carbide (SiC) power MOSFET from Wolfspeed, Inc., designed for high-power and high-frequency applications. It features an N-channel configuration with a 1200 V blocking voltage and a continuous drain current of 24 A at case temperature. The device is housed in a through-hole TO-247 package, offering thermal dissipation capabilities rated at 134 W. Key electrical characteristics include low on-resistance and low capacitances, enabling high-speed switching. The component is engineered for easy paralleling and simple drive requirements, ensuring robust avalanche ruggedness for demanding power electronics systems.
Feature Summary
- High-speed switching capability enabled by low internal capacitances
- Robust avalanche ruggedness for reliable operation under stress
- Simplified system design through easy paralleling and straightforward gate drive requirements
Applications
- High-power DC-DC converters
- High-frequency motor drives
- Industrial power supplies
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation to confirm exact electrical parameters and mechanical dimensions before integration. Ensure that the TO-247 through-hole mounting requirements align with the target PCB layout and thermal management strategy. Cross-reference official Wolfspeed specifications to validate performance expectations against application constraints.
Selection Notes
Select this component when a 1200 V SiC MOSFET with moderate current handling is required in a through-hole package. The TO-247 form factor suits designs prioritizing ease of assembly and thermal management via heatsinks. Consider its high-speed switching and low capacitance profile for applications demanding efficient high-frequency operation and simplified drive circuitry.
Part Context
The CMF10120D belongs to Wolfspeed's portfolio of silicon carbide power devices, previously associated with Cree, Inc. This discrete single FET is part of a broader range of SiC MOSFETs and Schottky diodes designed to enhance efficiency in power electronics. The product line supports various industrial and automotive applications requiring high-voltage, high-temperature performance.
Replacement Considerations
Consult official Wolfspeed documentation for verified substitute part numbers or next-generation equivalents within the same series. Ensure any replacement maintains compatibility with the TO-247 package and meets the 1200 V and 24 A specifications.
