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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.54A SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：540mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.58nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
- Power - Max：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The CMLDM3737 TR PBFREE is a surface-mount silicon dual N-channel enhancement-mode MOSFET from Central Semiconductor Corp, housed in an SOT-563 package. It features a Drain-Source Voltage (VDS) of 20 V and a continuous Drain Current (ID) of 540 mA at 25°C. The device exhibits a maximum rDS(ON) of 0.55 Ω at VGS=4.5V and ID=540mA, with a Gate-Source Threshold Voltage (VGS(th)) ranging from 0.45 V to 1.0 V. Total gate charge (Qg) is typically 1.58 nC at VGS=4.5V. Power dissipation reaches 350 mW on ceramic/aluminum cores or 300 mW on FR-4 boards. Operating junction temperature spans -65°C to +150°C.
Feature Summary
- Dual N-channel configuration designed for high-speed pulsed amplifier and driver applications
- Logic level compatible operation with very low threshold voltage
- ESD protection capability up to 2kV
- Small SOT-563 surface mount package
Applications
- Load switching and level shifting circuits
- Battery charging systems
- Boost switch topologies
- Electro-luminescent backlighting drivers
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The 'PBFREE' designation indicates lead-free compliance per standard industry definitions. Confirm RoHS status through official datasheets before integration. Ensure thermal management requirements align with the specified power dissipation limits for the target PCB material.
Selection Notes
Select this component for designs requiring dual N-channel isolation in a compact footprint. Evaluate rDS(ON) performance at the actual operating gate voltage, as resistance increases significantly below 4.5V. Consider the 20V breakdown limit for load switching applications. Verify that the 540mA continuous current rating meets peak load demands without exceeding thermal constraints.
Part Context
This part belongs to Central Semiconductor's discrete transistor portfolio, specifically within the dual MOSFET category. It serves as a complementary counterpart to the CMLDM5757 P-channel device. The SOT-563 form factor allows for space-constrained PCB layouts compared to larger dual-transistor packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official cross-reference lists or contact Central Semiconductor directly for verified alternatives.
