CMLDM3757 TR PBFREE

Overview

The CMLDM3757 TR PBFREE is a surface-mount complementary MOSFET containing N-Channel and P-Channel enhancement-mode devices in an SOT-563 package. The N-Channel transistor supports a continuous drain current of 540 mA with a maximum drain-source voltage of 20 V, while the P-Channel device handles 430 mA at the same voltage rating. Both transistors share a gate-source breakdown voltage of 8.0 V and a total power dissipation capacity of 350 mW under standard thermal conditions. The component operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• Complementary N-Channel and P-Channel enhancement-mode MOSFETs integrated into a single surface-mount package
• Logic level compatible design featuring very low threshold voltage for efficient switching applications
• ESD protection capability rated up to 1800V according to the Human Body Model standard

Applications

• Load and power switching circuits
• Power supply converter topologies
• Battery-powered portable electronic devices

Procurement Notes

Verify that the ordering suffix PBFREE corresponds to lead-free plating specifications as defined by the manufacturer's standard terms. Confirm the specific marking code 3C7 matches the physical component received. Ensure the procurement documentation references the correct SOT-563 case outline R6 for mechanical compatibility during assembly planning.

Selection Notes

Select this component when a compact complementary pair is required for high-speed pulsed amplifier or driver stages. Evaluate the rDS(ON) values at the intended gate drive voltage to ensure adequate efficiency. Consider the 350 mW power dissipation limit and the associated thermal resistance values relative to the target PCB copper pad area for the specific application environment.

Part Context

This part belongs to Central Semiconductor’s lineup of surface-mount silicon MOSFETs designed for space-constrained designs. It integrates two distinct transistors into one SOT-563 footprint, reducing board space compared to discrete implementations. The complementary configuration simplifies circuit design for push-pull or half-bridge applications requiring matched switching characteristics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters against potential alternatives before implementation.

FAQ

What is the ESD protection rating for the CMLDM3757?

The component provides ESD protection up to 1800V based on the Human Body Model.

How does the package type affect power dissipation?

Maximum power dissipation varies from 150 mW to 350 mW depending on the FR-4 epoxy PC board copper mounting pad area, ranging from 1.4 mm² to 4.0 mm².

What is the typical gate charge for the N-Channel transistor?

The total gate charge (Qg) for the N-Channel is typically 1.58 nC when tested at VDS=10V, VGS=4.5V, and ID=500mA.