SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CMLDM7003 TR is a surface-mount dual N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process and operates within a drain-source voltage range of 50 V and a continuous drain current of 280 mA. The device features low on-resistance, with maximum values of 3.0 Ω at VGS=1.8V and 2.0 Ω at VGS=5.0V. It provides ESD protection up to 2kV and includes total gate charge (Qg) of 0.764 nC. The component is housed in an SOT-563 package and supports junction temperatures from -65°C to +150°C.
Verify the specific ordering suffix required for your application. The base part number denotes the standard USA pinout configuration. If lead-free plating is mandated, append the PBFREE suffix. Confirm that the TR designation aligns with your preferred tape-and-reel packaging requirements before finalizing procurement orders.
Select this component when a compact dual N-channel solution is required for space-constrained designs. Ensure the driving circuit can supply sufficient gate voltage to achieve the desired low on-resistance levels. Verify thermal management capabilities against the specified power dissipation limits under your specific PCB copper pad area conditions.
This device belongs to the CMLDM series of surface-mount dual MOSFETs from Central Semiconductor. It shares functional similarities with other members like the CMLDM7002A but differs in specific electrical parameters and pinout configurations. The CMLDM7003J variant offers a Japanese pinout alternative within the same family.
Direct substitutes include the CMLDM7003G* for halogen-free compliance or the CMLDM7003J if a Japanese pinout configuration is necessary. Cross-reference electrical parameters carefully when considering non-family alternatives.