CMLDM7003 TR

CMLDM7003 TR

$0.65
  • Description:MOSFET 2N-CH 50V 0.28A SOT563
  • Series:-

SKU:502e16cda0ed Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.28A SOT563
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:280mA
  • Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
  • Power - Max:350mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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CMLDM7003 TR

Overview

The CMLDM7003 TR is a surface-mount dual N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process and operates within a drain-source voltage range of 50 V and a continuous drain current of 280 mA. The device features low on-resistance, with maximum values of 3.0 Ω at VGS=1.8V and 2.0 Ω at VGS=5.0V. It provides ESD protection up to 2kV and includes total gate charge (Qg) of 0.764 nC. The component is housed in an SOT-563 package and supports junction temperatures from -65°C to +150°C.

Feature Summary

  • Dual N-channel configuration designed for high-speed pulsed amplifier and driver applications
  • Integrated electrostatic discharge (ESD) protection rated up to 2kV
  • Low on-resistance characteristics optimized for efficient switching performance

Applications

  • High-speed pulsed amplifiers
  • Driver circuits
  • Surface mount electronic assemblies

Procurement Notes

Verify the specific ordering suffix required for your application. The base part number denotes the standard USA pinout configuration. If lead-free plating is mandated, append the PBFREE suffix. Confirm that the TR designation aligns with your preferred tape-and-reel packaging requirements before finalizing procurement orders.

Selection Notes

Select this component when a compact dual N-channel solution is required for space-constrained designs. Ensure the driving circuit can supply sufficient gate voltage to achieve the desired low on-resistance levels. Verify thermal management capabilities against the specified power dissipation limits under your specific PCB copper pad area conditions.

Part Context

This device belongs to the CMLDM series of surface-mount dual MOSFETs from Central Semiconductor. It shares functional similarities with other members like the CMLDM7002A but differs in specific electrical parameters and pinout configurations. The CMLDM7003J variant offers a Japanese pinout alternative within the same family.

Replacement Considerations

Direct substitutes include the CMLDM7003G* for halogen-free compliance or the CMLDM7003J if a Japanese pinout configuration is necessary. Cross-reference electrical parameters carefully when considering non-family alternatives.

CMLDM7003 TRCMLDM7003 TR
$0.65
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