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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.28A SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The CMLDM7003TG is a surface mount dual N-channel enhancement-mode silicon MOSFET manufactured using an N-Channel DMOS process. It features a SOT-563 package with a maximum drain-source voltage of 50 V and a continuous drain current of 280 mA. The device offers low on-resistance, ranging from 1.1 Ω to 2.3 Ω depending on gate drive conditions, and includes ESD protection up to 2 kV. Key electrical parameters include a gate-source threshold voltage of 0.7 V to 1.2 V, total gate charge of 0.764 nC, and power dissipation capabilities between 150 mW and 350 mW based on board configuration.
Feature Summary
- Dual N-channel enhancement-mode architecture designed for high-speed pulsed amplifier and driver applications
- Integrated electrostatic discharge (ESD) protection rated up to 2 kV
- Low gate-source threshold voltage enabling efficient drive requirements
- Halogen-free design compliant with environmental standards
Applications
- High-speed pulsed amplifier circuits
- Driver applications requiring dual channel control
- Surface mount PCB designs utilizing SOT-563 footprint
Procurement Notes
Verify the specific ordering suffix when purchasing. The datasheet indicates that adding 'PBFREE' specifies lead-free plating, while 'TIN/LEAD' requests tin/lead plating. Confirm the exact part number matches the required termination finish for your assembly process. Ensure the component source provides the official Central Semiconductor datasheet for accurate parameter validation.
Selection Notes
Select this component for designs requiring two independent N-channel switches in a compact SOT-563 package. Evaluate thermal resistance values against your copper pad area, as power dissipation varies significantly between ceramic/aluminum cores and FR-4 epoxy boards. Consider the 50 V breakdown voltage and 280 mA continuous current limits to ensure adequate headroom for your specific load requirements.
Part Context
This device belongs to the Central Semiconductor CMLDM series of surface mount dual MOSFETs. It shares the same physical package and general functional description as variants like the CMLDM7002A, though specific electrical characteristics such as voltage ratings and on-resistance may differ between models within the family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications before considering alternative manufacturers or generic equivalents.
