CMLDM7003TG TR PBFREE

Overview

The CMLDM7003TG TR PBFREE is a surface-mount dual N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process for high-speed pulsed amplifier and driver applications. Key electrical parameters include a drain-source voltage of 50 V, continuous drain current of 280 mA, and maximum pulsed drain current of 1.5 A. The device features low on-resistance ranging from 1.1 to 2.3 Ω depending on gate drive conditions, with a typical threshold voltage of 1.2 V. It provides ESD protection up to 2 kV and operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• Dual N-channel configuration in a compact SOT-563 package
• Low on-resistance optimized for efficient switching performance
• Integrated electrostatic discharge protection up to 2 kV
• Halogen-free design compliant with environmental standards

Applications

• High-speed pulsed amplifier circuits
• Driver applications requiring fast switching transitions
• Surface-mount power management designs

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'TR' designation indicates tape and reel packaging, while 'PBFREE' confirms lead-free plating compliance. Ensure the requested variant matches the exact marking code CTG and package outline R6 to guarantee compatibility with existing board layouts and assembly processes.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a minimal footprint. Evaluate thermal resistance values based on the specific copper pad area used on the PCB, as power dissipation ratings vary significantly between ceramic, aluminum core, and FR-4 epoxy substrates. Confirm that the required gate drive voltage aligns with the specified thresholds for optimal on-state performance.

Part Context

This part belongs to the CMLDM series of surface-mount dual MOSFETs from Central Semiconductor. It shares the SOT-563 form factor with related models like the CMLDM7002A and CMLDM7005, offering similar mechanical integration capabilities while providing distinct electrical characteristics tailored for specific voltage and current requirements in compact electronic assemblies.

Replacement Considerations

Direct substitutes must match the SOT-563 package and dual N-channel topology. Verify pinout compatibility, specifically the shared source and drain arrangements, before implementation. Cross-reference electrical limits such as VDS and ID to ensure adequate margin for the target application without altering board dimensions.

FAQ

What is the marking code for the CMLDM7003TG?

The marking code for this device is CTG.

How does the package configuration handle the channels?

The SOT-563 package contains two independent N-channel MOSFETs with shared source terminals for Q1 and Q2, allowing for compact dual-channel circuit designs.

What is the maximum pulsed drain current rating?

The maximum pulsed drain current (IDM) is rated at 1.5 A under specified test conditions.