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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.65A SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：650mA
- Rds On (Max) @ Id, Vgs：230mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.58nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：100pF @ 16V
- Power - Max：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor CMLDM7585 is a surface-mount complementary MOSFET containing an N-channel and P-channel enhancement-mode silicon device in a single SOT-563 package. Designed for high-speed pulsed amplifier and driver applications, it features very low on-resistance and logic-level compatibility. The N-channel component supports a drain-source voltage of 20V with a continuous drain current of 650mA. Key electrical parameters include a maximum gate-source voltage of 8.0V and power dissipation ratings ranging from 150mW to 350mW depending on the PCB copper pad area. The threshold voltage ranges from 0.5V to 1.1V, ensuring reliable switching at low gate drive levels.
Feature Summary
- Complementary N-channel and P-channel configuration in a compact SOT-563 package
- Logic level compatible with low threshold voltage for efficient driving
- ESD protection rated up to 1800V using the Human Body Model
- Optimized for high-speed pulsed amplifier and driver applications
Applications
- Load and power switches
- Power supply converter circuits
- Battery powered portable devices
Procurement Notes
Verify the specific ordering suffix when purchasing. The part number includes a TR13 designation indicating tape and reel packaging. Confirm the plating option required for the assembly process; standard availability is lead-free (PBFREE). Request tin/lead plating only if explicitly specified by adding the corresponding suffix during the order placement. Ensure the supplier provides the official datasheet to confirm the latest revision status before finalizing procurement.
Selection Notes
Select this component for designs requiring matched N-channel and P-channel performance in a minimal footprint. Evaluate thermal resistance based on the available copper pad area on the printed circuit board, as power dissipation varies significantly between 4.0mm² and 1.4mm² configurations. Verify that the application gate drive voltage aligns with the logic-level compatibility to ensure optimal rDS(ON) performance and switching speed.
Part Context
This component belongs to Central Semiconductor's portfolio of surface-mount silicon MOSFETs. It is specifically engineered as a complementary pair to simplify the design of push-pull stages and bridge drivers. The SOT-563 case outline allows for automated assembly while maintaining the electrical characteristics necessary for portable electronics and signal processing circuits.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, match the SOT-563 package dimensions, 20V VDS rating, and complementary channel configuration. Verify that the replacement offers comparable rDS(ON) values and ESD protection levels suitable for the target application environment.
