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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.65A SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：650mA
- Rds On (Max) @ Id, Vgs：360mOhm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：100pF @ 16V
- Power - Max：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The CMLDM8005 TR PBFREE is a surface-mount silicon dual P-channel enhancement-mode MOSFET in an SOT-563 package. It features a drain-source voltage of 20V and a continuous drain current of 650mA at 25°C. The device offers a maximum on-resistance of 0.36Ω at VGS=4.5V and ID=350mA, with a logic-level compatible threshold voltage of 1.0V maximum. Total gate charge is 1.2nC, and power dissipation reaches 350mW. Operating junction temperature spans -65°C to +150°C.
Feature Summary
- Dual P-channel configuration for compact circuit integration
- Logic level compatible operation for direct microcontroller interfacing
- Very low on-resistance for efficient power switching
- ESD protection up to 1800V (Human Body Model)
Applications
- Load switch and level shifting circuits
- Battery charging management systems
- Boost switch applications
- Electro-luminescent backlighting drivers
Procurement Notes
Verify the specific ordering suffix when purchasing. The 'PBFREE' designation indicates lead-free plating compliance. Requesting tin/lead plated devices requires adding the 'TIN/LEAD' suffix to the part number. Confirm package type and thermal pad requirements match the target PCB layout before finalizing orders.
Selection Notes
Select this component for high-speed pulsed amplifier and driver applications requiring low threshold voltage. Ensure the design accounts for the 357°C/W thermal resistance on FR-4 boards. Verify that the 20V drain-source voltage rating exceeds the maximum circuit operating voltage under all transient conditions.
Part Context
This device belongs to the Central Semiconductor CMxxDM series of small signal MOSFETs. It serves as the complementary dual P-channel counterpart to the CMLDM7005 N-channel device. The marking code CC8 identifies the component on the SOT-563 case outline.
Replacement Considerations
The datasheet explicitly lists the CMLDM7005 as the complementary dual N-channel device. No other direct substitute part numbers are documented in the provided source material.
