CMPA851A025D

Overview

The CMPA851A025D is a Gallium Nitride (GaN) High Power Amplifier (HPA) MMIC die manufactured by MACOM Technology Solutions. It operates within the frequency range of 8.5 GHz to 10.5 GHz and delivers an output power of 25 Watts. The component utilizes high-performance GaN on Silicon Carbide (SiC) technology, designed for applications requiring robust RF performance in a bare die format.

Feature Summary

• Utilizes high-performance GaN on SiC production process for enhanced thermal and electrical characteristics
• Designed as a monolithic microwave integrated circuit (MMIC) die for flexible integration
• Optimized for high-power amplification in the C-band frequency spectrum

Applications

• Military radar systems
• Electronic warfare equipment
• Satellite communication ground stations

Procurement Notes

Verify current availability status directly with authorized distributors or the manufacturer, as supply may be restricted. Confirm export control requirements and necessary documentation prior to ordering, as this product may require additional files for international shipment. Ensure compatibility with your specific PCB design and thermal management solutions for the bare die configuration.

Selection Notes

Select this component when a 25W output capability is required in the 8.5-10.5 GHz range. Consider the bare die form factor if space constraints and custom packaging are preferred over pre-packaged modules. Evaluate thermal dissipation needs carefully due to the high power density inherent in GaN HPA designs.

Part Context

This part belongs to the CMPA series of RF amplifiers from MACOM, which leverages advanced semiconductor processes. The CMPA851A025D specifically targets high-frequency, high-power applications where efficiency and linearity are critical. It represents a discrete solution compared to fully packaged amplifier assemblies.