ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.3A SOT-23F
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 5V
- Rds On (Max) @ Id, Vgs：88mOhm @ 1.2A, 5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23F
- Package / Case：SOT-23-3 Flat Leads
Download product information
Overview
The CMPDM202PH is a surface-mount P-channel enhancement-mode silicon MOSFET manufactured using a P-channel DMOS process. It operates within a drain-source voltage range of 20 V and supports a continuous drain current of 2.3 A, with a maximum pulsed current of 9.2 A at 10 μs pulses. The device features a low on-resistance of 0.088 Ω max at VGS=5.0V and 0.093 Ω max at VGS=2.5V. Total gate charge is typically 8.0 nC. Thermal resistance (junction-to-ambient) is 357 °C/W, and the operating junction temperature spans from -55 °C to +150 °C.
Feature Summary
- Designed for high-speed pulsed amplifier and driver applications
- Logic level compatible with low threshold voltage operation
- Optimized for high current handling and low leakage characteristics
Applications
- Load and power switching circuits
- Power supply converter topologies
- Battery-powered portable equipment
Procurement Notes
Verify component status carefully as this specific part number has been officially discontinued by Central Semiconductor Corp. Confirm availability through authorized distributors or check for existing inventory before initiating procurement processes. Contact engineering support for technical data regarding alternative sourcing options if standard channels are unavailable.
Selection Notes
Select this component when designing circuits requiring a P-channel MOSFET with logic-level gate drive compatibility. Ensure the application demands a 20 V rating and up to 2.3 A steady-state current. Verify that the SOT-23F package thermal constraints align with the system's heat dissipation requirements given the specified thermal resistance value.
Part Context
This device belongs to the CMPDM series of surface-mount MOSFETs produced by Central Semiconductor Corp. It utilizes a P-channel DMOS process technology specifically engineered to deliver high current capabilities alongside low on-resistance values. The component is housed in an SOT-23F case configuration.
Replacement Considerations
Central Semiconductor has officially classified this product as End of Life (EOL). No direct replacement part numbers are provided in the manufacturer's discontinuation notice. Users must identify alternate sources or equivalent components from other manufacturers.
