CMPDM203NH TR

Description：MOSFET N-CH 20V 3.2A SOT-23F
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)

SKU:f9acaeaa878d Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 3.2A SOT-23F
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：50mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：395 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23F
Package / Case：SOT-23-3 Flat Leads

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CMPDM203NH TR

Overview

The CMPDM203NH TR is a surface-mount N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process designed for high-speed pulsed amplifier and driver applications. The device features low on-resistance, logic-level compatibility, and high current capability within a SOT-23F package. Key electrical parameters include a drain-source voltage of 20 V, continuous drain current of 3.2 A, and maximum power dissipation of 350 mW at 25°C ambient temperature.

Feature Summary

High current capability with low on-resistance
Logic level gate drive compatibility
Low threshold voltage and leakage current

Applications

Load and power switches
Power supply converter circuits
Battery powered portable equipment

Procurement Notes

Verify component status before procurement as the CMPDM203NH series has been transitioned to End of Life (EOL) status per Product Discontinuation Notice PDN01070 issued in March 2018. Confirm availability of remaining inventory or seek alternative sourcing options directly from Central Semiconductor engineering support if standard stock is unavailable.

Selection Notes

Select this component for designs requiring high-speed switching and low conduction losses in compact surface-mount layouts. Ensure thermal management accommodates the specified junction temperature range and power dissipation limits. Verify that the application voltage and current requirements remain within the absolute maximum ratings defined in the datasheet.

Part Context

This part belongs to the CMPDM series of surface-mount N-channel enhancement-mode silicon MOSFETs produced by Central Semiconductor Corp. These devices are characterized by their use of N-Channel DMOS technology, which enables efficient performance in small form factor packages suitable for modern electronic circuitry.